Development of Si/SiO2 Multilayer Type AFM Tip Characterizers

A new type of AFM tip characterizer used for characterizing nanostructures in the 10 nm to 100 nm range was developed. The characterizer was fabricated by preferential etching the edge of a cross sectioned Si/SiO2 multilayer. Both isolated line structures and line-and-space structures were fabricate...

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Bibliographic Details
Published inJournal of Surface Analysis Vol. 17; no. 3; pp. 264 - 268
Main Authors Takenaka, Hisataka, Hatayama, Masatoshi, Ito, Hisashi, Ohchi, Tadayuki, Takano, Akio, Kurosawa, Satoru, Itoh, Hiroshi, Ichimura, Shingo
Format Journal Article
LanguageEnglish
Published The Surface Analysis Society of Japan 2011
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Summary:A new type of AFM tip characterizer used for characterizing nanostructures in the 10 nm to 100 nm range was developed. The characterizer was fabricated by preferential etching the edge of a cross sectioned Si/SiO2 multilayer. Both isolated line structures and line-and-space structures were fabricated. The structural and practical properties of the fabricated tip characterizer were evaluated, and it was shown that it can be used to characterize AFM tip shapes in the 10 nm to 100 nm range.
ISSN:1341-1756
1347-8400
DOI:10.1384/jsa.17.264