Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs

• Published in: IEEE electron device letters Vol. 25; no. 3; pp. 150 - 152
• Main Authors: Vanhoucke, T., Boots, H.M.J., van Noort, W.D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Current measurement; Devices; Electric potential; Electrical resistance measurement; Emitters (electron); Germanium silicon alloys; Heat transfer; Heterojunction bipolar transistors; Silicon; Silicon germanides; Silicon germanium; Silicon on insulator technology; Temperature dependence; Temperature sensors; Thermal resistance; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2004.824242

A revision is presented of the technique to determine the junction temperature and thermal resistance of bipolar transistors. It is based on the temperature sensitivity of the base-emitter voltage when biasing the device under constant emitter current. It accounts correctly for the self-heating of the device during the measurement. Results are obtained for devices fabricated on silicon-on-insulator (SOI) and bulk silicon having different emitter widths and lengths. An increment of the thermal resistance is found for SOI devices with respect to bulk.