Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs
A revision is presented of the technique to determine the junction temperature and thermal resistance of bipolar transistors. It is based on the temperature sensitivity of the base-emitter voltage when biasing the device under constant emitter current. It accounts correctly for the self-heating of t...
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Published in | IEEE electron device letters Vol. 25; no. 3; pp. 150 - 152 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.03.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A revision is presented of the technique to determine the junction temperature and thermal resistance of bipolar transistors. It is based on the temperature sensitivity of the base-emitter voltage when biasing the device under constant emitter current. It accounts correctly for the self-heating of the device during the measurement. Results are obtained for devices fabricated on silicon-on-insulator (SOI) and bulk silicon having different emitter widths and lengths. An increment of the thermal resistance is found for SOI devices with respect to bulk. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2004.824242 |