A Review on MEMS Silicon Resonant Accelerometers

• Published in: Journal of microelectromechanical systems Vol. 33; no. 2; pp. 174 - 208
• Main Authors: Zhang, Zhao, Zhang, Hemin, Hao, Yongcun, Chang, Honglong
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Accelerometer; Accelerometers; CMOS technology; Electrostatics; MEMS; Microelectromechanical systems; mode-localization; Resonant frequency; Resonators; Sensors; Silicon; silicon resonant accelerometers; Synchronism
• ISSN: 1057-7157; 1941-0158
• DOI: 10.1109/JMEMS.2024.3354235

This paper reviews the development of silicon resonant accelerometers from 1987 to 2022. For more than 30 years, silicon resonant accelerometers have developed into varieties of structures based on different sensing methods. In the beginning, resonant accelerometers were reported to realize acceleration measurements by detecting the frequency shifts of resonators. A variety of advancements have emerged in the realm of accelerometers, encompassing various aspects such as resonator diversity, enhancements in scale factor, expanded sensing orientations, reduced temperature sensitivity, and the integration of CMOS technology. Furthermore, innovative accelerometer designs have harnessed mode-localized phenomena, synchronization techniques, and parametric modulation, with the overarching goal of enhancing their performance and expanding their applicability. This paper reviews and analyzes the performances and structures of a range of silicon resonant accelerometers over the past three decades, providing a detailing reference and guidance for researchers in this field.