Broadening the temperature range for high thermoelectric performance of bulk polycrystalline strontium titanate by controlling the electronic transport properties
Strontium titanate (SrTiO 3 ) is a promising n-type thermoelectric material at high temperature. However, to date, its reported high dimensional figure of merit ( zT ) > 0.4 has only been achieved in a narrow temperature range near 1000 K. In this study, zT values of >0.4 were achieved in the...
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Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 6; no. 28; pp. 7594 - 7603 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
2018
|
Subjects | |
Online Access | Get full text |
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Summary: | Strontium titanate (SrTiO
3
) is a promising n-type thermoelectric material at high temperature. However, to date, its reported high dimensional figure of merit (
zT
) > 0.4 has only been achieved in a narrow temperature range near 1000 K. In this study,
zT
values of >0.4 were achieved in the broad temperature range of 769–1009 K in bulk SrTiO
3
co-doped with La and Nb with
in situ
precipitation of second phases of NbC and TiO
2−δ
. The electronic transport properties of the samples were optimized by adjusting the doping ratio, resulting in a large power factor of 1.82 mW m
−1
K
−2
at 622 K for 7 mol% La–7 mol% Nb-doped SrTiO
3
. Notably, the power factor (PF) decreased more gradually with increasing temperature, resulting in a high PF of 1.28 mW m
−1
K
−2
even at 1009 K. In addition, precipitation of the second phases occurred during sintering of the mixture of La–Nb doped SrTiO
3
nano powder and carbon powder, which provided additional phonon scattering centers except for the phonon scattering centers of La and Nb point defects. This high thermoelectric performance achieved over a broad temperature range could be beneficial for broadening the range of application temperatures for bulk polycrystalline SrTiO
3
. Furthermore, the tailoring strategy of co-doping, an
in situ
second phase, and oxygen vacancies applied in this study may be applicable to other oxide thermoelectric materials. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/C8TC02130A |