Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit

• Published in: IEEE transactions on electron devices Vol. 53; no. 3; pp. 515 - 522
• Main Authors: Kejun Xia, Guofu Niu, Sheridan, D.C., Sweeney, S.L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Accumulators; Applied sciences; Collectors; Correlation; Crowding effect; Electric, optical and optoelectronic circuits; Electronics; Equivalent circuits; Exact sciences and technology; Germanium alloys; Heterojunction bipolar transistors; Mathematical models; Noise; noise modeling; non-quasi-static effect; Radio frequencies; Semiconductor device modeling; Semiconductor device noise; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiGe heterojunction bipolar transistor (HBT); Silicon alloys; Silicon germanides; Theoretical study. Circuits analysis and design; Transistors; Semiconductor alloys; High strength current; Frequency dependence; Crowding effect; noise modeling; Noise measurement; Modeling; SiGe heterojunction bipolar transistor (HBT); Injection current; Noise source; Network analysis; Equivalent circuit; Circuit noise; Heterojunction bipolar transistors; Base collector junction; non-quasi-static effect
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2005.863537

This paper presents modeling of correlated RF noise in the intrinsic base and collector currents of SiGe heterojunction bipolar transistors using quasi-static equivalent circuits. The noises are first extracted from measured noise parameters using standard noise circuit analysis. Using the extraction results, model equations are proposed to describe both the frequency and bias dependence of the correlated noise sources using a single set of model parameters. The model is demonstrated using noise data from both measurement and microscopic noise simulation. The model is shown to work at frequencies up to at least half of the peak f/sub T/ and at biasing currents below high injection f/sub T/ rolloff.