A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology

We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520...

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Bibliographic Details
Published inOptics express Vol. 20; no. 6; p. 5849
Main Authors Mandai, Shingo, Fishburn, Matthew W, Maruyama, Yuki, Charbon, Edoardo
Format Journal Article
LanguageEnglish
Published United States 12.03.2012
Subjects
Equipment Design
Equipment Failure Analysis
Pattern Recognition, Automated - methods
Photometry - instrumentation
Photons
Semiconductors
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Summary:We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/μm2, at an excess bias of 4V when we measure 10 μm diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.20.005849