Unipolar potentiation and depression in memristive devices utilising the subthreshold regime

We present a resistance switching device that exhibits analogue potentiation and depression of conductance under the same voltage polarity. This contrasts with previously studied devices that potentiate and depress under opposite polarities. We refer to this mode of operation as the subthreshold reg...

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Bibliographic Details
Published inIEEE transactions on nanotechnology Vol. 22; pp. 1 - 8
Main Authors Mannion, Daniel J., Vu, Viet Cuong, Ng, Wing H, Mehonic, Adnan, Kenyon, Anthony J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Circuits
Contacts
current transient
Depression
Electric potential
Gold
Memory devices
memristor
neuromorphic
ReRAM
resistance switching
silicon oxide
subthreshold regime
Switching
synapse
Synapses
Transient analysis
Voltage
Voltage pulses
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Summary:We present a resistance switching device that exhibits analogue potentiation and depression of conductance under the same voltage polarity. This contrasts with previously studied devices that potentiate and depress under opposite polarities. We refer to this mode of operation as the subthreshold regime due to it occurring at voltage or current biases that are insufficient to produce discrete or non-volatile switching. This behaviour has the potential to reduce the complexity of neuronal and synaptic circuitry in neuromorphic computing by removing the need for voltage pulses of both positive and negative polarities. The characteristically long timescales may also help replicate bio-realistic timings. In this paper, we detail how to induce this unique behaviour, how to tune its properties to a desired response, and finally, we demonstrate one potential application.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2023.3284144