Temperature dependence of hole mobility in methylated germanane field-effect transistor

Abstract Methylated germanane, a layered material in which single-layer germanium is terminated by methyl groups, was utilized as a channel material of back-gate-type FETs. Titanium (Ti) and nickel (Ni) were used as source and drain electrodes of FETs, and the FET with the Ti electrode showed ambipo...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 63; no. 3; pp. 30905 - 30909
Main Authors Hiraoka, Yuuki, Suzuki, Yudai, Hachiya, Kouhei, Nakayama, Atsuki, Tabata, Hiroshi, Katayama, Mitsuhiro, Kubo, Osamu
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.03.2024
Japanese Journal of Applied Physics
Subjects
2D semiconductor
electrical transport
Electrodes
Field effect transistors
germanane
Germanium
Hole mobility
mobility
Nickel
Semiconductor devices
Temperature dependence
Titanium
transistor
Transition metal compounds
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Summary:Abstract Methylated germanane, a layered material in which single-layer germanium is terminated by methyl groups, was utilized as a channel material of back-gate-type FETs. Titanium (Ti) and nickel (Ni) were used as source and drain electrodes of FETs, and the FET with the Ti electrode showed ambipolar characteristics, whereas that with the Ni electrode showed p-type characteristics. The maximum hole mobility at RT is 380 cm 2 V −1 s −1 , which is higher than those of typical transition metal dichalcogenides. The mobility changes with temperature T according to the T −3/2 law at temperatures ranging from 243 to 343 K, suggesting that the major scattering factor of holes is acoustic phonons.
Bibliography:JJAP-105755.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad30a2