Magnetic-field-controlled positioning of magnetic domain wall in tie-shaped asymmetric nanowire and its application for magnetic field detection

With topological spin texture, magnetic domain walls have soliton-like dynamic behaviors in magnetic nanowires, which can be used in information transmission and storage technology. Therefore, precisely controlling the dynamic behavior of the magnetic domain wall and its pinning behavior is one of t...

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Published inPhysical chemistry chemical physics : PCCP Vol. 26; no. 42; pp. 27216 - 27223
Main Authors Yang, Xiaoxue, Zhang, Xue-Feng, Li, Changfeng, Li, Huiting
Format Journal Article
LanguageEnglish
Published England Royal Society of Chemistry 30.10.2024
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Summary:With topological spin texture, magnetic domain walls have soliton-like dynamic behaviors in magnetic nanowires, which can be used in information transmission and storage technology. Therefore, precisely controlling the dynamic behavior of the magnetic domain wall and its pinning behavior is one of the important technical challenges in realizing domain-wall-based spintronic devices. In this work, a geometrically defect-free scheme for domain wall pinning/depinning is proposed using micromagnetic simulations based on a tie-shaped asymmetric nanowire, which can precisely control the position of the magnetic domain wall in an external magnetic field. The results show that the domain wall in tie-shaped nanowires exhibits excellent linear response and ultrafast time response to external magnetic fields, which endow them with potential applications for high-frequency weak-magnetic-field detection. We further propose a scheme for constructing a magnetic-field sensor using the tie-structured nanowire, and we study its feasibility. A tie-shaped ferromagnetism nanowire, which can be precisely control the position of the domain wall, exhibits ultrafast time response to external magnetic fields, with helpful potential applications for high-frequency magnetic field detection.
Bibliography:https://doi.org/10.1039/d4cp01262c
Electronic supplementary information (ESI) available. See DOI
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ISSN:1463-9076
1463-9084
1463-9084
DOI:10.1039/d4cp01262c