FeMPIM: A FeFET-Based Multifunctional Processing-in-Memory Cell
The Von-Neumann memory wall bottleneck that keeps expanding is mainly caused by the frequent data transfer between the main memory and the processor. The processing in-memory (PiM) capabilities of emerging nonvolatile devices have the potential to partially alleviate the memory wall problem. In this...
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Published in | IEEE transactions on circuits and systems. II, Express briefs Vol. 71; no. 4; pp. 2299 - 2303 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.04.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | The Von-Neumann memory wall bottleneck that keeps expanding is mainly caused by the frequent data transfer between the main memory and the processor. The processing in-memory (PiM) capabilities of emerging nonvolatile devices have the potential to partially alleviate the memory wall problem. In this brief, we use the ferroelectric field-effect transistor (FeFET), one of the emerging nonvolatile devices, to design a multifunctional processing in-memory cell, namely FeMPIM. It can perform multiple logic operations in computing mode as well as content searching in ternary content-addressable memory (TCAM) mode. Simulation results demonstrate the multifunctional capability of the proposed FeMPIM as well as its moderate overhead when compared with the complementary metal-oxide-semiconductor (CMOS) based and the existing FeFET-based devices. |
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ISSN: | 1549-7747 1558-3791 |
DOI: | 10.1109/TCSII.2023.3331267 |