Comparative Study of Carrier Lifetime Dependence on Dopant Concentration in Silicon and Germanium

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 154; no. 3; p. H231
Main Authors Gaubas, E., Vanhellemont, J.
Format Journal Article
LanguageEnglish
Published 2007
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ISSN:0013-4651
DOI:10.1149/1.2429031