Multivalued Stability Map of an Injection-Locked Semiconductor Laser
We present a novel and detailed analysis of the locking range and the stability map for side-mode injection-locked in-plane semiconductor multimode lasers. By including the usually neglected unlocked modes in our model, we predict a multivalued locking range and stability map for this type of lasers...
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Published in | IEEE journal of selected topics in quantum electronics Vol. 19; no. 4; p. 1501408 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.07.2013
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We present a novel and detailed analysis of the locking range and the stability map for side-mode injection-locked in-plane semiconductor multimode lasers. By including the usually neglected unlocked modes in our model, we predict a multivalued locking range and stability map for this type of lasers. We also explain and relate, the previously noticed slave laser bistability phenomenon with the multivalued character of the locking range and stability map, and experimentally validate our findings. Moreover, we find that the unstable operating region, commonly found in literature by stability analysis of the injection-locked mode alone, is actually much smaller. |
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ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/JSTQE.2013.2241026 |