Fine structure and real space analysis of neutral acceptor states in GaAs

The properties of neutral acceptor states in GaAs are re-examined in the frame of extended-basis tight-binding model. Spherical harmonics decomposition of microscopic local density of states (LDOS) allows for the direct analysis of the tight-binding results in terms of k p approximation. Lifting of...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 30; no. 3; pp. 35019 - 35027
Main Authors Nestoklon, M O, Krebs, O, Benchamekh, R, Voisin, P
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2015
Subjects
electronic structure
exchange interaction
impurity levels
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Summary:The properties of neutral acceptor states in GaAs are re-examined in the frame of extended-basis tight-binding model. Spherical harmonics decomposition of microscopic local density of states (LDOS) allows for the direct analysis of the tight-binding results in terms of k p approximation. Lifting of degeneracy by strain and electric field and their effect on LDOS are examined. The fine structure of magnetic impurity caused by exchange interaction of hole with impurity d-shell and its dependence on strain is studied. It is shown that exchange interaction makes the ground state more isotropic.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/30/3/035019