Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and Its Equivalent Circuit Representation

• Published in: IEEE transactions on nanotechnology Vol. 19; pp. 837 - 840
• Main Authors: Miranda, Enrique, Sune, Jordi
• Format: Journal Article
• Language: English
• Published: New York IEEE 2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Differential equations; Electric potential; Equations of state; Equivalent circuits; Initial conditions; Integrated circuit modeling; Mathematical model; memory; Memory devices; Memristor; Representations; Resistance; resistive switching; Self-similarity; Signal generation; Switches; Switching; Switching circuits; System theory; Systems theory; Voltage
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2020.3039391

A memory state equation consistent with a number of experimental observations is presented and discussed within the framework of Chua's memristive systems theory. The proposed equation describes the evolution of the memory state corresponding to a bipolar resistive switching device subject to a variety of electrical stimuli. It is shown that the memory equation agrees with: i ) the characteristic switching time associated with the ion/vacancy hopping mechanism within the dielectric film, ii ) the SET/RESET voltage logarithmic dependence on the voltage sweep ramp rate, iii ) the hysteretic behavior of the remnant conductance for cycled input signals, iv ) the generation of self-similar conductance loops for arbitrary initial conditions, and v ) the collapse of the resistive window with the increment of the input signal frequency. It is also shown that the proposed equation admits a circuital representation suitable for circuit simulations.