A Voltage-Based Leakage Current Calculation Scheme and its Application to Nanoscale MOSFET and FinFET Standard-Cell Designs

• Published in: IEEE transactions on very large scale integration (VLSI) systems Vol. 22; no. 12; pp. 2549 - 2560
• Main Authors: Abbas, Zia, Mastrandrea, Antonio, Olivieri, Mauro
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Design engineering; FinFETs; Integrated circuit modeling; Leakage current; Leakage currents; Loading; Logic gates; standard cells; VLSI; Voltage control; VLSI; standard cells; Leakage current
• ISSN: 1063-8210; 1557-9999
• DOI: 10.1109/TVLSI.2013.2294550

Logic-level estimators of leakage currents, in nanoscale standard-cell-based designs, are relevant for the dramatic speed advantage with respect to analog SPICE-level simulation. We propose a novel logic-level leakage estimation model based on the characterization of voltages at the internal nodes of digital cells, in conjunction with the characterization of leakage currents in a single field-effect transistor (FET) device and with the input-dependent Kirchhoff current law expression of the total current in the cell topology. The voltage-based nature of the approach simplifies the inclusion of supply voltage variation/scaling impact, as well as of output voltage drop (loading effect), on leakage currents. The method has been implemented in hardware description language models of a complete cell library. Exhaustive tests report average accuracy below 1% error in 22-nm CMOS and 20-nm FinFET technologies, when compared with SPICE BSIM simulation results.