Absorption properties of GaAsBi based p-i-n heterojunction diodes

The absorption properties of GaAsBi have been investigated using GaAsBi based p-i-n diodes with different bismuth compositions (∼2.1 and ∼3.4%). The absorption behaviour of GaAsBi as a function of incident photon energy above the band gap follows that of a direct band gap material. With increasing b...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 30; no. 9; pp. 94004 - 94009
Main Authors Zhou, Zhize, Mendes, Danuta F, Richards, Robert D, Bastiman, Faebian, David, John PR
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2015
Subjects
absorption coefficient
bismides
diffusion length
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Summary:The absorption properties of GaAsBi have been investigated using GaAsBi based p-i-n diodes with different bismuth compositions (∼2.1 and ∼3.4%). The absorption behaviour of GaAsBi as a function of incident photon energy above the band gap follows that of a direct band gap material. With increasing bismuth content, the absorption of photons with energy lower than the band gap in GaAsBi is enhanced, probably due to localized states caused by Bi-related defects. A simplified analysis has been undertaken on the behaviour of absorption as a function of bias voltage. By undertaking photoresponsivity measurements as a function of reverse bias, the background doping type and the minority carriers diffusion lengths in GaAsBi have been determined.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/30/9/094004