Uni-Traveling Carrier Photodiodes: Development and Prospects

The development of uni-traveling carrier photodiodes over the past 25 years is briefly reviewed and the key design in their structure are discussed. Monte Carlo simulation run for minority electrons locally excited in a p-type InGaAs structure reveals how they behave and leave the absorber. This sho...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 28; no. 2: Optical Detectors; pp. 1 - 6
Main Authors Ishibashi, Tadao, Ito, Hiroshi
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
absorber delay time
Charge density
Delays
Doping
Electron optics
Electrons
Indium gallium arsenide
minority electrons
Modified UTC-PD
Monte Carlo simulation
nonlinearity
Optical fiber amplifiers
output saturation
Photodiodes
Space charge
Stimulated emission
UTC-PD
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Summary:The development of uni-traveling carrier photodiodes over the past 25 years is briefly reviewed and the key design in their structure are discussed. Monte Carlo simulation run for minority electrons locally excited in a p-type InGaAs structure reveals how they behave and leave the absorber. This shows the very diffusive nature of electrons, even in a moderately high quasi-field. Output linearity is carefully verified based on experimental THz-wave output vs. operation current. The first stage of saturation prior to severe field collapse is shown to be ruled by space charge density linearly changing with operation current. In the scaling down of a UTC-PD for faster operations, the space-charge effect is not significant, but junction self-heating is a factor imposing limitations.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2021.3123383