Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs

The body current lowering effect of 130 nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain cu...

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Bibliographic Details
Published inChinese physics letters Vol. 34; no. 1; pp. 16103 - 16106
Main Authors Liu, Xiao-Nian, Dai, Li-Hua, Ning, Bing-Xu, Zou, Shi-Chang
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing Ltd 01.01.2017
Subjects
61.80.Az
61.80.Ed
61.82.Fk
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Summary:The body current lowering effect of 130 nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current I b / I d is also investigated. Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lateral electric field of the pinch-off region induced by the trapped charges in the buried oxide layer (BOX). The positive charges in the BOX layer can counteract the maximum lateral electric field to some extent.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/1/016103