Investigation on Particle Generation Mechanism during Dichlorosilane-Based WSi Deposition Process

Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources. In this paper, generation of typical defect during dichlorosilane-based WSi2 deposition process is systematically evaluated. The root cause analysis using tape sampling test and parts...

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Bibliographic Details
Published inECS transactions Vol. 25; no. 3; pp. 225 - 231
Main Authors Oh, Myeonghun, Kim, Jaungjoo, Kim, Jinsung, Yang, Jichul, Lee, Soocheol, Kim, Taesung
Format Journal Article
LanguageEnglish
Published 25.09.2009
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Summary:Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources. In this paper, generation of typical defect during dichlorosilane-based WSi2 deposition process is systematically evaluated. The root cause analysis using tape sampling test and parts analysis revealed that the source of silicon particles during the particle generation is due to Vapor-Liquid-Solid(VLS) mechanism. The particle generation according to gas flow rate, susceptor material, susceptor structure were studied systematically. As a result, we found that silicon component particle generation could be suppressed by AlN Coating susceptor with revised structure.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3204410