Achieving ambipolar vertical organic transistors via nanoscale interface modification

Organic field-effect transistors have been the subject of much recent inquiry due to their unique properties. Here, the authors report an ambipolar vertical organic field-effect transistor, which consists of a capacitor cell vertically stacked with an organic active cell, separated by a thin source...

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Bibliographic Details
Published inApplied physics letters Vol. 91; no. 8
Main Authors Li, Sheng-Han, Xu, Zheng, Ma, Liping, Chu, Chih-Wei, Yang, Yang
Format Journal Article
LanguageEnglish
Published 20.08.2007
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Summary:Organic field-effect transistors have been the subject of much recent inquiry due to their unique properties. Here, the authors report an ambipolar vertical organic field-effect transistor, which consists of a capacitor cell vertically stacked with an organic active cell, separated by a thin source electrode. By inserting a nanoscale transition-metal-oxide layer at the source/organic interface, the authors fabricated the organic ambipolar transistors with low working voltage and high current output. The thin transition-metal oxide and partial oxidization metal grains form a unique nanostructure that balances the injection barrier height of two types of carriers at the source/organic contact.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2773749