Effect of In Situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD

The dielectric property has great influence on characteristics of bottom-gate nanocrystalline silicon thin film transistor at low process temperature ({less than or equal to} 200°). For improving the quality of the gate dielectric layer, in-situ hydrogen annealing step in the silicon nitride deposit...

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Bibliographic Details
Published inECS transactions Vol. 28; no. 1; pp. 395 - 399
Main Authors Lee, Youn-Jin, Lee, Kyoung-Min, Hwang, Jae-Dam, No, Kil-Sun, Hong, Wan-Shick
Format Journal Article
LanguageEnglish
Published 16.04.2010
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Summary:The dielectric property has great influence on characteristics of bottom-gate nanocrystalline silicon thin film transistor at low process temperature ({less than or equal to} 200°). For improving the quality of the gate dielectric layer, in-situ hydrogen annealing step in the silicon nitride deposition process was attempted in low process temperature by catalytic CVD system. The in-situ hydrogen annealing was effective in advanced field effect mobility and capacitance-voltage characteristic by decreasing the defects inside the SiNx film.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3375626