Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Free electron concentration and carrier mobility measurements on 4H–SiC metal-oxide-semiconductor inversion layers are reported in this article. The key finding is that in state-of-the-art nitrided gate oxides, loss of carriers by trapping no longer plays a significant role in the current degradatio...

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Bibliographic Details
Published inJournal of applied physics Vol. 108; no. 5
Main Authors Dhar, S., Haney, S., Cheng, L., Ryu, S.-R., Agarwal, A. K., Yu, L. C., Cheung, K. P.
Format Journal Article
LanguageEnglish
Published 01.09.2010
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Summary:Free electron concentration and carrier mobility measurements on 4H–SiC metal-oxide-semiconductor inversion layers are reported in this article. The key finding is that in state-of-the-art nitrided gate oxides, loss of carriers by trapping no longer plays a significant role in the current degradation under heavy inversion conditions. Rather, it is the low carrier mobility (maximum∼60 cm2 V−1 s−1) that limits the channel current. The measured free carrier concentration is modeled using the charge-sheet model and the mobility is modeled by existing mobility models. Possible mobility mechanisms have been discussed based on the modeling results.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3484043