Anomalous Capacitance--Voltage Characteristics of GaAs/AlGaAs Multiple Quantum Well Solar Cells

We study the capacitance--voltage characteristics of GaAs/AlGaAs coupled multiple quantum well (MQW) solar cells. It is found that the capacitance under illumination increases sharply if the bias is raised above $-0.2$ V, and gets maximum at a bias of about 0.2 V. This increment in capacitance by th...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 51; no. 10; pp. 10ND07 - 10ND07-3
Main Authors Noda, Takeshi, Mano, Takaaki, Jo, Masafumi, Ding, Yi, Kawazu, Takuya, Sakaki, Hiroyuki
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.10.2012
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Summary:We study the capacitance--voltage characteristics of GaAs/AlGaAs coupled multiple quantum well (MQW) solar cells. It is found that the capacitance under illumination increases sharply if the bias is raised above $-0.2$ V, and gets maximum at a bias of about 0.2 V. This increment in capacitance by the illumination is ascribed to the reduction of the depletion layer thickness, caused by the spatially separated accumulation of photogenerated electrons and holes trapped in the MQW layer.
Bibliography:Schematic illustration of the sample structure. $I$--$V$ characteristics of the sample under dark and illuminated conditions at RT. Monochromatic light of 750 nm in wavelength is used. $C$--$V$ characteristics of the sample under dark and illuminated conditions at RT. Inset: the bias dependence of the change in capacitance induced by illumination. Dependence of $\Delta C$--$V$ relation on the power of incoming light, measured at RT. Data for the maximum power (100%) corresponds to the same condition as that of Fig. . The samples are illuminated by light with a wavelength of 750 nm.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.10ND07