(Invited) Graphene FETs: Promises and Challenges

We present a critical review of graphene for field-effect transistor (FET) application. By using graphene sheet as the channel material, the new FET is expected offer significant advantages in certain aspects over and above that of the present Si-based counterpart. There are many challenges as well...

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Bibliographic Details
Published inECS transactions Vol. 33; no. 6; pp. 953 - 961
Main Authors Miao, Congqin, Park, Young Ju, Liu, Wei, Wang, Yanjie, Zhu, Jing, Huang, BoChao, Woo, Jason S.C., Xie, Ya-Hong
Format Journal Article
LanguageEnglish
Published 01.10.2010
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Summary:We present a critical review of graphene for field-effect transistor (FET) application. By using graphene sheet as the channel material, the new FET is expected offer significant advantages in certain aspects over and above that of the present Si-based counterpart. There are many challenges as well since the overall operating principle of the FET channel is different. We present our perspective with regard to these challenges. And we also demonstrate the ability of synthesizing monolayer graphene on Cu foils and placing it on insulator surfaces.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3487627