Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons
We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3 Ga 0.7 As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metall...
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| Published in | Japanese Journal of Applied Physics Vol. 51; no. 6; pp. 06FE14 - 06FE14-3 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
The Japan Society of Applied Physics
01.06.2012
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| Online Access | Get full text |
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| Summary: | We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3 Ga 0.7 As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ${\approx}1.5$ μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs. |
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| Bibliography: | Schematic diagram of the n--i Schottky diode device in which GaAs island QDs are embedded and a vertical electric field $\mathbf{E}$ is applied. The image shows the laser being focused to the 200 nm aperture size. (a) Orthogonal linear-polarization-resolved PL spectra of exciton in GaAs single QD at $E = 22.9$ kV/cm. The spectra were taken at polarization angles of 100° (solid line) and 10° (dotted line). (b) Polar plot of exciton PL energy against linear polarization angle of GaAs island QD relative to [$1\bar{1}0$] sample crystal axis at $E = 22.9$ kV/cm. The solid line is fit to the data. The polar plot has an axis scale increment of 10 μeV. (a) Orthogonal linear-polarization-resolved PL spectra of the exciton in a GaAs single QD at $E = 27.8$ kV/cm. The spectra were taken at polarization angles of 100° (solid line) and 10° (dotted line). (b) Polar plot of exciton PL energy against linear polarization angle of GaAs island QD relative to [$1\bar{1}0$] sample crystal axis at $E = 27.8$ kV/cm. The solid line is fit to the data. The polar plot has an axis scale increment of 10 μeV. Vertical-electric-field dependence of the GaAs island QD fine structure splitting energy $\Delta_{\text{FSS}}$. |
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.51.06FE14 |