Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology

High performance analog (HPA) devices in high-$k$ metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed "freely" with no extra mask, no extra lith...

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Published inJapanese Journal of Applied Physics Vol. 50; no. 4; pp. 04DC13 - 04DC13-5
Main Authors Han, Jin-Ping, Shimizu, Takashi, Pan, Li-Hong, Voelker, Moritz, Bernicot, Christophe, Arnaud, Franck, Mocuta, Anda, Stahrenberg, Knut, Azuma, Atsushi, Eller, Manfred, Yang, Guoyong, Jaeger, Daniel, Zhuang, Haoren, Miyashita, Katsura, Stein, Kenneth, Nair, Deleep, Park, Jae Hoo, Kohler, Sabrina, Hamaguchi, Masafumi, Li, Weipeng, Kim, Kisang, Chanemougame, Daniel, Kim, Nam Sung, Uchimura, Sadaharu, Tsutsui, Gen, Wiedholz, Christian, Miyake, Shinich, Meer, Hans van, Liang, Jewel, Ostermayr, Martin, Lian, Jenny, Celik, Muhsin, Donaton, Ricardo, Barla, Kathy, Na, MyungHee, Goto, Yoshiro, Sherony, Melanie, Johnson, Frank S, Wachnik, Richard, Sudijono, John, Kaste, Ed, Sampson, Ron, Ku, Ja-Hum, Steegen, An, Neumueller, Walter
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2011
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Summary:High performance analog (HPA) devices in high-$k$ metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed "freely" with no extra mask, no extra litho, and no extra process step. This paper details a comprehensive study of the analog and digital characteristics of these HPA devices in comparison with analog control (conventional digital devices with matched geometry). Analog properties such as output voltage gain (also called self-gain), trans-conductance $G_{\text{m}}$, conductance $G_{\text{ds}}$, $G_{\text{m}}/I_{\text{d}}$, mismatching (MM) behavior, flicker noise ($1/f$ noise) and current linearity have clearly reflected the advantage of HPA devices over analog control, while DC performance (e.g., $I_{\text{on}}$--$I_{\text{off}}$, $I_{\text{off}}$--$V_{\text{tsat}}$, DIBL, $C_{\text{jswg}}$) and reliability (HCI) have also shown the comparability of HPA devices over control.
Bibliography:Schematics of transistors with options of (a) quad halo I/I, (b) dual vertical (to PC) halo I/I, (c) dual horizontal halo I/I, and (d) no halo I/I. (a) iGain of HPA devices increases significantly compared to control on n-FETs. (b) $G_{\text{m}}$ shows improvement too. Similar improvement was seen on pFETs (not shown). HPA devices show reduction on n-FETs with (a) $G_{\text{ds}}$ (b) DIBL (${>}3L_{\text{nom}}$) compared to control; similar improvement on p-FETs (not shown here). Example of n-FETs $1\times 3L_{\text{nom}}$. (a) $G_{\text{m}}$ vs $I_{\text{d}}$ and (b) $\sqrt{G_{\text{m}}/G_{3}}$ s vs $I_{\text{d}}$ show clear improvement for HPA devices over control in term of trans-conductance at given drain current and linearity. pFETs HPA $V_{\text{t}}$ mismatch show (a) AVT reduction over control, while length dependence of (b) DIBL mismatch of HPA show reduction with an interesting U-shape trend with second order polynomial fitting. Similar improvement is seen on n-FETs (not shown). Low frequency $1/f$ noise spectrum of HPA devices show reduction compared to analog control, example of p-FET is shown here. The insets are flick noise zoom-in spectrum at low frequency. Similar improvement is seen on n-FETs (not shown).
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.04DC13