Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3  μ m

• Published in: Journal of applied physics Vol. 112; no. 2
• Main Authors: Ghosh, K., Naresh, Y., Srichakradhar Reddy, N.
• Format: Journal Article
• Language: English
• Published: 15.07.2012
• Subjects: Annealing; Gallium arsenide; Gallium arsenides; Indium arsenides; Multilayers; Quantum dots; Semiconductors; Telecommunications; Wavelengths
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4739457

In this paper, we present theoretical analysis and computation for tuning the ground state (GS) photoluminescence (PL) emission of InAs/GaAs quantum dots (QDs) at telecommunication window of 1.3–1.55 μm by optimizing its height and base dimensions through quantum mechanical concepts. For this purpose, numerical modelling is carried out to calculate the quantized energy states of finite dimensional QDs so as to obtain the GS PL emission at or beyond 1.3 μm. Here, we also explored strain field altering the QD size distribution in multilayer heterostructure along with the changes in the PL spectra, simulation on post growth thermal annealing process which blueshifts the operating wavelength away from the vicinity of 1.3 μm and improvement of optical properties by varying the thickness of GaAs spacing. The results are discussed in detail which will serve as an important information tool for device scientist fabricating high quality semiconductor quantum structures with reduced defects at telecommunication wavelengths.