Double injection in graphene p-i-n structures

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensiona...

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Bibliographic Details
Published inJournal of applied physics Vol. 113; no. 24
Main Authors Ryzhii, V., Semenikhin, I., Ryzhii, M., Svintsov, D., Vyurkov, V., Satou, A., Otsuji, T.
Format Journal Article
LanguageEnglish
Published 28.06.2013
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Summary:We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4812494