A study on the transient effect due to hydrogen passivation in InGaP HBTs

The transient effect of InGaP heterojunction bipolar transistors is studied. The current gain increases with V/sub BE/ bias and becomes stable after several sweeps. The time to reach steady state depends on the collector current I/sub C/ and the ambient temperature. A new electrical method was intro...

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Bibliographic Details
Published inIEEE electron device letters Vol. 24; no. 6; pp. 372 - 374
Main Authors Shao-You Deng, Chang-Han Wu, Lee, J.Y.-M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Atomic layer deposition
Atomic measurements
Atomic properties
Carbon
Collectors
Devices
Epitaxial growth
Gallium arsenide
Heterojunction bipolar transistors
Hydrogen
Mass spectroscopy
Nuclear power generation
Passivation
Secondary ion mass spectrometry
Temperature dependence
Thermal degradation
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Summary:The transient effect of InGaP heterojunction bipolar transistors is studied. The current gain increases with V/sub BE/ bias and becomes stable after several sweeps. The time to reach steady state depends on the collector current I/sub C/ and the ambient temperature. A new electrical method was introduced to calculate the passivation ratio, which is defined as the number of donor hydrogen (H/sup +/) atoms divided by the number of negatively charged carbon atoms (C/sup -/) in the heavily doped base layer. A passivation ratio of 69.98% obtained by this method agrees very well with that measured by secondary ion mass spectrometry of 69%.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.813360