A High-Performance Charge Pump Topology for Very-Low-Voltage Applications

This brief presents a novel charge pump suitable to work under very-low-voltage supply. The circuit exploits a novel charge transfer switch made up by the combination of a NMOS and a PMOS transistor whose gates are connected to internal nodes of the charge pump to enhance overdrive voltage. This sol...

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Bibliographic Details
Published inIEEE transactions on circuits and systems. II, Express briefs Vol. 67; no. 7; pp. 1304 - 1308
Main Authors Ballo, A., Grasso, A. D., Palumbo, G.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge pumps
Charge transfer
CMOS
DC-DC converter
Dickson charge pump
energy harvesting
Gates (circuits)
Logic gates
low-voltage
Metal oxide semiconductors
MOSFET
Power efficiency
Resistance
switched capacitors converters (SCC)
Threshold voltage
Topology
Transistors
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Summary:This brief presents a novel charge pump suitable to work under very-low-voltage supply. The circuit exploits a novel charge transfer switch made up by the combination of a NMOS and a PMOS transistor whose gates are connected to internal nodes of the charge pump to enhance overdrive voltage. This solution allows working with supply voltage values lower that the MOS threshold voltage. Post layout simulation results using a 65-nm CMOS standard technology show the effectiveness of the proposed solution and its advantage as compared to a traditional latched charge pump in terms of high current driving range, power efficiency and speed.
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2019.2932471