Photoluminescence of boron nitride nanosheets exfoliated by ball milling

The photoluminescence of boron nitride (BN) nanosheets exfoliated by ball milling method has been investigated. At room temperature, the nanosheets have strong deep ultraviolet (DUV) light emission at 224 nm and weak defect-related UV (∼300 nm) emission. The DUV peak profile slightly changes with th...

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Published inApplied physics letters Vol. 100; no. 26
Main Authors Hua Li, Lu, Chen, Ying, Cheng, Bing-Ming, Lin, Meng-Yeh, Chou, Sheng-Long, Peng, Yu-Chain
Format Journal Article
LanguageEnglish
Published 25.06.2012
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Abstract The photoluminescence of boron nitride (BN) nanosheets exfoliated by ball milling method has been investigated. At room temperature, the nanosheets have strong deep ultraviolet (DUV) light emission at 224 nm and weak defect-related UV (∼300 nm) emission. The DUV peak profile slightly changes with the increase of milling time due to the increase of stacking faults caused by the shear force during milling. The decreased ∼300 nm emission after milling treatments has been attributed to the preferential orientation of the BN nanosheets on substrate and the strong polarization anisotropy of BN materials in luminescence.
AbstractList The photoluminescence of boron nitride (BN) nanosheets exfoliated by ball milling method has been investigated. At room temperature, the nanosheets have strong deep ultraviolet (DUV) light emission at 224 nm and weak defect-related UV (∼300 nm) emission. The DUV peak profile slightly changes with the increase of milling time due to the increase of stacking faults caused by the shear force during milling. The decreased ∼300 nm emission after milling treatments has been attributed to the preferential orientation of the BN nanosheets on substrate and the strong polarization anisotropy of BN materials in luminescence.
Author Peng, Yu-Chain
Hua Li, Lu
Chou, Sheng-Long
Cheng, Bing-Ming
Lin, Meng-Yeh
Chen, Ying
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