Photoluminescence of boron nitride nanosheets exfoliated by ball milling

The photoluminescence of boron nitride (BN) nanosheets exfoliated by ball milling method has been investigated. At room temperature, the nanosheets have strong deep ultraviolet (DUV) light emission at 224 nm and weak defect-related UV (∼300 nm) emission. The DUV peak profile slightly changes with th...

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Bibliographic Details
Published inApplied physics letters Vol. 100; no. 26
Main Authors Hua Li, Lu, Chen, Ying, Cheng, Bing-Ming, Lin, Meng-Yeh, Chou, Sheng-Long, Peng, Yu-Chain
Format Journal Article
LanguageEnglish
Published 25.06.2012
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Summary:The photoluminescence of boron nitride (BN) nanosheets exfoliated by ball milling method has been investigated. At room temperature, the nanosheets have strong deep ultraviolet (DUV) light emission at 224 nm and weak defect-related UV (∼300 nm) emission. The DUV peak profile slightly changes with the increase of milling time due to the increase of stacking faults caused by the shear force during milling. The decreased ∼300 nm emission after milling treatments has been attributed to the preferential orientation of the BN nanosheets on substrate and the strong polarization anisotropy of BN materials in luminescence.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4731203