Gallium nitride devices for power electronic applications

• Published in: Semiconductor science and technology Vol. 28; no. 7; pp. 74011 - 74018
• Main Author: Baliga, B Jayant
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.07.2013
• Subjects: Gallium nitride devices; GaN; power electronics

Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has made this technology a contender for power electronic applications. This paper discusses the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices. Progre...