Gallium nitride devices for power electronic applications

Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has made this technology a contender for power electronic applications. This paper discusses the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices. Progre...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor science and technology Vol. 28; no. 7; pp. 74011 - 74018
Main Author Baliga, B Jayant
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.07.2013
Subjects
Gallium nitride devices
GaN
power electronics
Online AccessGet full text

Cover

More Information
Summary:Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has made this technology a contender for power electronic applications. This paper discusses the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices. Progress in development of vertical power devices from bulk GaN is reviewed followed by analysis of the prospects for GaN-on-Si HFET structures. Challenges and innovative solutions to creating enhancement-mode power switches are reviewed.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/28/7/074011