Design, Simulation and Performance Analysis of JLTFET Biosensor for High Sensitivity

In this paper, the symmetrical design of a double gate dielectric modulated junctionless tunnel field-effect transistor (DG-DM-JLTFET)-based structure is proposed and investigated and for the first time to inspect label-free recognition of biological molecules like uricase, protein, biotin, aminopro...

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Bibliographic Details
Published inIEEE transactions on nanotechnology Vol. 18; pp. 567 - 574
Main Authors Wadhwa, Girish, Raj, Balwinder
Format Journal Article
LanguageEnglish
Published New York IEEE 2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:In this paper, the symmetrical design of a double gate dielectric modulated junctionless tunnel field-effect transistor (DG-DM-JLTFET)-based structure is proposed and investigated and for the first time to inspect label-free recognition of biological molecules like uricase, protein, biotin, aminopropyl-triethoxysilane, etc. The point when biological molecules get immobilized in nanocavity area, the variation in the drain current, subthreshold slope, and ION/IOFF ratio has been used as the detecting parameters to recognize the sensitivity of the DG-DM-JLTFET for biomolecule recognition by using TCAD simulation. A cavity is designed by etching a layer from the substrate, at the side of the gate electrode. A dual metal gate structure is framed by utilizing two unique metal entryway anodes to decrease short channel effects of DG-DM-JLTFET. An examination is exhibited to show the effect of fill-in factor of biological molecules on drain current of DG-DM-JLTFET device. The existence of biological molecules in a small region inside the nanocavity area above the tunneling junction results in the variation of the electrical properties of the device. This brings about high sensitivity in terms of drain current, subthreshold slope, and ION/IOFF ratio. The proposed device structure gives perceptible outcomes for both (neutral and charged) types of biological molecules.
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ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2019.2918192