Mode formation in broad area quantum dot lasers at 1060 nm

• Published in: Optics communications Vol. 235; no. 4; pp. 387 - 393
• Main Authors: Tanguy, Y., Muszalski, J., Houlihan, J., Huyet, G., Pearce, E.J., Smowton, P.M., Hopkinson, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2004; Elsevier Science
• Subjects: Broad-area lasers; Dynamical laser instabilities; noisy laser behavior; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Laser materials; Laser optical systems: design and operation; Lasers; Optical materials; Optics; Physics; Quantum dots; Semiconductor lasers; Semiconductor lasers; laser diodes; Spatio-temporal instabilities; Transverse mode; 42.55.Px; Broad-area lasers; 42.60.Mi; Transverse mode; Spatio-temporal instabilities; Semiconductor lasers; Quantum dots; 42.70.Hj; Aluminium Gallium Arsenides; Gallium arsenides; Temperature effects; Ternary compounds; Indium Gallium Arsenides; Laser stability; Binary compounds; Experimental device; Experimental study
• ISSN: 0030-4018; 1873-0310
• DOI: 10.1016/j.optcom.2004.02.048

An analysis of the transverse and longitudinal mode structure of broad area quantum dot lasers emitting at 1060 nm is presented. In particular, temperature is shown to play an important role in the stabilisation of the transverse mode structure of the devices. In addition, the investigation of the interaction between these transverse modes, through the measurement of the spatial intensity correlation, shows that the laser retains some modal properties in the unstable regime. Finally, measurements of spectral correlations between longitudinal mode groups display a strong dependency on their respective transverse mode structures indicating the importance of spatial overlap.