Fixed pattern noise from charge transfer loss in CCD imager

It has been analyzed theoretically and verified experimentally that fixed pattern noise (FPN) is generated by the charge transfer loss when the charge in the CCD imager device generated by photoelectric conversion is imaged with a charge partitioning mode. This is done by removing the unnecessary no...

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Bibliographic Details
Published inElectronics & communications in Japan. Part 2, Electronics Vol. 76; no. 3; pp. 43 - 51
Main Authors Ohkubo, Yoshio, Ohmae, Masanori, Ishikawa, Kiyotsugu
Format Journal Article
LanguageEnglish
Published New York Wiley Subscription Services, Inc., A Wiley Company 1993
Subjects
CCD
electronic shutter
Fixed pattern noise
image sensor
transfer loss
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Summary:It has been analyzed theoretically and verified experimentally that fixed pattern noise (FPN) is generated by the charge transfer loss when the charge in the CCD imager device generated by photoelectric conversion is imaged with a charge partitioning mode. This is done by removing the unnecessary nonsignal charge and reading out the signal charge. The result shows that the transfer loss due to the removal must be less than 10−4 to achieve even an ordinary picture quality with signal‐to‐noise (SN) ratio of 60 dB when the signal in the charge partitioning mode is one‐tenth the total charge. Furthermore, for a high‐quality image with SN ratio above 70 dB, the transfer loss in reading two kinds of charge must be less than 10−5 which is almost a perfect charge transfer.
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ArticleID:ECJB4420760306
Masanori Ohmae graduated in 1979 from Kyoto University of Industrial Art and Textile and joined Matsushita Electric. After leaving Matsushita Electronics Semiconductor Research Center, he affiliated with the Memory Product Group. He is engaged in the research and development of solid‐state imager device drive peripheral systems.
Kiyotsugu Ishikawa received a B.S. and an M.S. from Osaka University in 1969 and 1971, respectively. In 1971 he joined Matsushita Electric. He left Matsushita Electronics Semiconductor Research Center and is currently with the Memory Product Group. He is engaged in the research and development of solid‐state imaging device coloring methods and periphery drive systems.
Yoshio Ohkubo received a B.S. and an M.S. from Osaka City University in 1959 and 1961, respectively. In 1961, he joined Matsushita Electric. After leaving Matsushita Electronics Semiconductor Research Center, he moved to the Technology Information Control Center. He is engaged in the research and development of imaging devices and their applications.
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ISSN:8756-663X
1520-6432
DOI:10.1002/ecjb.4420760306