A New Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor with Dual-Channel Structure

To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-...

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Published inJapanese Journal of Applied Physics Vol. 40; no. 12R; p. 6683
Main Author Young Sung, Woo-Beom Choi
Format Journal Article
LanguageEnglish
Published 01.12.2001
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Abstract To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.
AbstractList To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.
Author Young Sung, Woo-Beom Choi
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Cites_doi 10.1143/JJAP.36.1663
10.1143/JJAP.40.5262
10.1109/16.777171
10.3938/jkps.37.878
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