A New Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor with Dual-Channel Structure
To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-...
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Published in | Japanese Journal of Applied Physics Vol. 40; no. 12R; p. 6683 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.12.2001
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Online Access | Get full text |
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Summary: | To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.40.6683 |