Inertial-grade in-plane resonant silicon accelerometer

A micro-G detectable in-plane vibrating accelerometer is implemented by using a single crystalline silicon and glass-silicon anodic-bonded vacuum packaging technique. The sensing principle of the accelerometer is a gap-sensitive electrostatic stiffness changing effect. A mixed surface-bulk micromach...

Full description

Saved in:
Bibliographic Details
Published inElectronics letters Vol. 42; no. 19; pp. 1092 - 1094
Main Authors SEOK, S, CHUN, K
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 14.09.2006
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Electrostatic effect
Vibrating apparatus
Electronic packaging
Vacuum technique
Micromachining
Accelerometer
Resonant circuit
Online AccessGet full text

Cover

More Information
Summary:A micro-G detectable in-plane vibrating accelerometer is implemented by using a single crystalline silicon and glass-silicon anodic-bonded vacuum packaging technique. The sensing principle of the accelerometer is a gap-sensitive electrostatic stiffness changing effect. A mixed surface-bulk micromachining technology has been developed to use 40mum-thick silicon as a structure material. The fabricated accelerometer shows a resolution of 5.2muG and 128Hz/G at the nominal frequency of 23.4kHz.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20061774