Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters

We discuss lattice-mismatched (LMM) approaches utilizing compositionally step-graded layers and buffer layers that yield III-V photovoltaic devices with performance parameters equaling those of similar lattice-matched (LM) devices. Our progress in developing high-performance, LMM, InP-based GaInAs/I...

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Published inConference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005 pp. 530 - 535
Main Authors Wanlass, M.W., Ahrenkiel, S.P., Ahrenkiel, R.K., Albin, D.S., Carapella, J.J., Duda, A., Geisz, J.F., Kurtz, S., Moriarty, T., Wehrer, R.J., Wernsman, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Buffer layers
Crystalline materials
Energy conversion
Epitaxial growth
Hydrogen
III-V semiconductor materials
Photonic band gap
Photovoltaic systems
Solar power generation
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Summary:We discuss lattice-mismatched (LMM) approaches utilizing compositionally step-graded layers and buffer layers that yield III-V photovoltaic devices with performance parameters equaling those of similar lattice-matched (LM) devices. Our progress in developing high-performance, LMM, InP-based GaInAs/InAsP materials and devices for thermophotovoltaic (TPV) energy conversion is highlighted. A novel, monolithic, multi-bandgap, tandem device for solar PV (SPV) conversion involving LMM materials is also presented along with promising preliminary performance results.
ISBN:9780780387072
0780387074
ISSN:0160-8371
DOI:10.1109/PVSC.2005.1488186