Improvement of the high temperature properties of the LiYO2–Si3N4 system by removing residual Li

The effects of the vaporisation of residual Li on micros tructure, oxidation behaviour and high propertie s of a low-temperature pressureless Si3N4 using LiY O2 additive were investigated. oxidation and creep resis tance of Si3N4 was after annealing at 1650 C becaus e residual Li, deteriorated the h...

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Published inJournal of the European Ceramic Society Vol. 29; no. 15; pp. 3293 - 3297
Main Authors Lee, Sea-Hoon, Mager, Reinhard
Format Journal Article
LanguageEnglish
Published 01.12.2009
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Summary:The effects of the vaporisation of residual Li on micros tructure, oxidation behaviour and high propertie s of a low-temperature pressureless Si3N4 using LiY O2 additive were investigated. oxidation and creep resis tance of Si3N4 was after annealing at 1650 C becaus e residual Li, deteriorated the high temperature prope rties of could be mostly removed. The high temperatur e of Si3N4 was strongly suppressed after the ann treatment. The annealed specimens retained 64% of room temperature strength at 1300 C in air. A to imp rove the high temperature properties of is reported.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0955-2219
DOI:10.1016/j.jeurceramsoc.2009.06.021