Improvement of the high temperature properties of the LiYO2–Si3N4 system by removing residual Li
The effects of the vaporisation of residual Li on micros tructure, oxidation behaviour and high propertie s of a low-temperature pressureless Si3N4 using LiY O2 additive were investigated. oxidation and creep resis tance of Si3N4 was after annealing at 1650 C becaus e residual Li, deteriorated the h...
Saved in:
Published in | Journal of the European Ceramic Society Vol. 29; no. 15; pp. 3293 - 3297 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
01.12.2009
|
Online Access | Get full text |
Cover
Loading…
Summary: | The effects of the vaporisation of residual Li on micros tructure, oxidation behaviour and high propertie s of a low-temperature pressureless Si3N4 using LiY O2 additive were investigated. oxidation and creep resis tance of Si3N4 was after annealing at 1650 C becaus e residual Li, deteriorated the high temperature prope rties of could be mostly removed. The high temperatur e of Si3N4 was strongly suppressed after the ann treatment. The annealed specimens retained 64% of room temperature strength at 1300 C in air. A to imp rove the high temperature properties of is reported. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0955-2219 |
DOI: | 10.1016/j.jeurceramsoc.2009.06.021 |