High-Power 625-nm AlGaInP Laser Diode

Highly efficient quantum well laser diode is promising as a red light source for laser display. In the wavelength range of red light, short lasing wavelength is preferred because spectral luminous efficiency increases sharply as wavelength shortens. In this paper, we present high-power AlGaInP laser...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 17; no. 6; pp. 1723 - 1726
Main Authors Shimada, N., Ohno, A., Abe, S., Miyashita, M., Yagi, T.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2011
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
AlGaInP
Diode lasers
laser diode
laser display
Light sources
Optical device fabrication
Quantum well lasers
red
Semiconductor lasers
Temperature measurement
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Summary:Highly efficient quantum well laser diode is promising as a red light source for laser display. In the wavelength range of red light, short lasing wavelength is preferred because spectral luminous efficiency increases sharply as wavelength shortens. In this paper, we present high-power AlGaInP laser diode with remarkably short lasing wavelength of 625 nm. The fabricated device showed 220 mW and 44 lm output at 25 ° C under CW operation. Efficiency was measured as 24 lm/W. Comparisons to 630-nm and 638-nm laser diodes are also presented.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2011.2121895