Integration of n-and p-channel Ingap/InGaAs doped-channel pseudomorphic HFETs

n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimenta...

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Published inElectronics letters Vol. 43; no. 13; pp. 732 - 734
Main Authors TSAI, J.-H, LI, C.-M, LIU, W.-C, GUO, D.-F, CHIU, S.-Y, LOUR, W.-S
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 21.06.2007
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
p channel
Microelectronic fabrication
Gate voltage
Linear amplification
Integrated circuit
Doped materials
n channel
Selective etching
Heterojunction field effect transistor
Two-dimensional electron gas
Current density
Transconductance
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Summary:n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72)mS/mm and a saturation current density of 335 (-270)mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20070621