Annealing of thin magnetoresistive permalloy films

The figure of merit of magnetoresistive Permalloy thin films, which are commonly used for bubble domain sensors, is shown to improve considerably after annealing treatments. This improvement is caused by a lowering of the electrical resistivity, due to particle size and grain growth with activation...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on magnetics Vol. 9; no. 3; pp. 568 - 570
Main Authors Krongelb, S., Gangulee, A., Das, G.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1973
Subjects
Annealing
Coercive force
Electric resistance
Electrons
Magnetic films
Magnetic sensors
Magnetoresistance
Sensor phenomena and characterization
Switches
Temperature
Online AccessGet full text

Cover

More Information
Summary:The figure of merit of magnetoresistive Permalloy thin films, which are commonly used for bubble domain sensors, is shown to improve considerably after annealing treatments. This improvement is caused by a lowering of the electrical resistivity, due to particle size and grain growth with activation energies of 0.70 ± 0.05 eV and 1.86 ± 0.15 eV, respectively. Comparisons indicate that thin permalloy films, which are deposited at 250°C and subsequently annealed, are superior as sensor materials to those deposited at 325°C.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.1973.1067608