Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

• Published in: IEEE transactions on power electronics Vol. 34; no. 6; pp. 5012 - 5018
• Main Authors: Han, Shaowen, Yang, Shu, Li, Rui, Wu, Xinke, Sheng, Kuang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Collapse; Current measurement; Current-collapse-free; dynamic <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">on -resistance (<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> R_{\text{ON}}</tex-math> </inline-formula>); Electronic devices; Gallium nitride; Gallium nitrides; High temperature; Performance evaluation; Recovery; Rectifiers; reverse recovery; Schottky diodes; Silicon carbide; Substrates; Switches; vertical GaN-on-GaN devices; Voltage measurement
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2018.2876444

The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic on -resistance (<inline-formula><tex-math notation="LaTeX">R_{\text{ON}}</tex-math></inline-formula>) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low <inline-formula><tex-math notation="LaTeX">R_{\text{ON}}</tex-math></inline-formula>·<inline-formula><tex-math notation="LaTeX">Q_{\rm rr}</tex-math></inline-formula> figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic <inline-formula><tex-math notation="LaTeX">R_{\text{ON}}</tex-math></inline-formula> degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: off -state stress bias up to 500 V, off -state stress time within 10 −6 -10 2 s, high temperature up to 150 °C, and different load current levels.