Compact mm-Wave Bandpass Filters Using Silicon Integrated Passive Device Technology

• Published in: IEEE microwave and wireless components letters Vol. 29; no. 10; pp. 638 - 640
• Main Authors: Kim, Dong-Min, Min, Byung-Wook, Yook, Jong-Min
• Format: Journal Article
• Language: English
• Published: IEEE 01.10.2019
• Subjects: Band-pass filters; Bandpass filter (BPF); compact filter; Couplings; Inductors; Insertion loss; Insulators; integrated passive device (IPD); millimeter wave (mm wave); organic lamination; Resonators; Silicon
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2019.2936688

In this letter, a compact bandpass filter (BPF) using integrated passive device (IPD) technology is presented, which is based on a pair of coupled-line inductors. To analyze the principle of this design, a simple but effective equivalent circuit model is provided. Using this model, it is easy to increase the number of resonators order. This structure is implemented by using a Si-based IPD process in which line inductors are located on a thick laminated organic (H = 40 μm) with a ground metal for shielding of lossy silicon. The minimum insertion loss of two-resonator BPF is 1.1 dB, and cascaded two-resonator structure is 2.3 dB. The size of two-resonator and cascaded two-resonator BPFs, excluding the pads, are only 0.246 mm × 0.44 mm and 0.492 mm × 0.88 mm, respectively.