6.7-15.3 GHz, High-Performance Broadband Low-Noise Amplifier With Large Transistor and Two-Stage Broadband Noise Matching

• Published in: IEEE microwave and wireless components letters Vol. 31; no. 8; pp. 949 - 952
• Main Authors: Choi, Han-Woong, Kim, Choul-Young, Choi, Sunkyu
• Format: Journal Article
• Language: English
• Published: IEEE 01.08.2021
• Subjects: Broadband; Broadband amplifiers; complementary metal–oxide–semiconductor (CMOS); electrostatic discharge (ESD) protection; Electrostatic discharges; Gain; Inductors; low-noise amplifier (LNA); Microwave transistors; Transistors; Wideband
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2021.3092742

This letter presents a fully integrated wideband, ultralow average noise figure (NF), low power consumption, compact, and electrostatic discharge protected 6.7-15.3-GHz low-noise amplifier (LNA). A peak-gain distribution technique with a large transistor and two-stage broadband noise matching technique are proposed. For verification, a two-stage common source LNA is implemented in a 65-nm bulk complementary metal-oxide-semiconductor technology. The fabricated LNA achieved an average NF of 2.08 dB and an average gain of 19.1 dB with in-band gain ripple of ±0.75 dB in the frequency range of 7.6-14.7 GHz. It has a 3-dB fractional bandwidth of 78% and the third-order input intercept point is −9.0 dBm at 10 GHz. It consumes a 16 mA at a 0.8-V supply and has an area of 0.144 mm 2 .