Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

In this paper, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion-mode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with t...

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Bibliographic Details
Published inIEEE electron device letters Vol. 35; no. 1; pp. 12 - 14
Main Authors CHEN, Che-Wei, CHUNG, Cheng-Ting, TZENG, Ju-Yuan, CHANG, Pang-Sheng, LUO, Guang-Li, CHIEN, Chao-Hsin
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.2014
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
body-tied
Electronics
Exact sciences and technology
Germanium
in-situ heavily doped
Junctionless
Logic gates
MOSFET circuits
Resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
Transistors
tri-gate
MOS technology
MOSFET
In situ
PMOS technology
Short channel
Doped materials
tri-gate
in-situ heavily doped
Junctionless
Field effect transistor
body-tied
p channel
Germanium
Boron addition
DIBL effect
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Summary:In this paper, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion-mode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent I ON /I OFF ratio and good short channel effect control on the channel potential. The current ratio is of ~6×10 3 (ID) at V DS =-0.1 V, V GS =-3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at V DS =-0.1 V and V GS =0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at L G =120 nm.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2291394