Electron trapping of laser-induced carriers in Er-doped SnO2 thin films

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Bibliographic Details
Published inJournal of the European Ceramic Society Vol. 27; no. 13-15; pp. 3803 - 3806
Main Authors MORAIS, E. A, SCALVI, L. V. A
Format Conference Proceeding Journal Article
LanguageEnglish
Published Oxford Elsevier 2007
Subjects
Charge carriers: generation, recombination, lifetime, trapping, mean free paths
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Physics
Grain boundaries
Radiation effects
Inorganic compounds
Electrical conductivity
Sol-gel
Doping
Erbium doping
Thin films
Charge carrier trapping
Vacancy density
Substitutional impurities
Laser radiation
Tin oxide
Illumination
Activation energy
Tin dioxide films
Erbium additions
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ISSN:0955-2219
1873-619X
DOI:10.1016/j.jeurceramsoc.2007.02.037